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Extra resources for High-Speed Pulse Techniques
P. ) Fundamentals of Silicon Integrated Device Technology, Vol. II, Bipolar and Unipolar Transistors, Prentice Hall, 1968. LAWRENCE, H. and WARNER, R. M. Diffused junction depletion layer calcula tions, Bell Sys. Tech. , Vol. 39, No. 2, pp. 389^03 (1960). 4. ALLISON, J. Op. , p. 208. 5. LIN, H. C. Diode operation of a transistor in fundamental blocks. IEEE Trans. on Electron Devices, ED-10, May 1963, pp. 189-194. 6. Ko, W. H. The forward transient behaviour of semiconductor junction diodes, Solid State Electronics, Vol.
3· The Low-Pass Circuit Model The shunt capacitance of the low-pass network is a short circuit to high-frequency components and so the impulsive front edge of a step function input cannot be transmitted (Fig. 7). The transfer function is 1/(1 + sRC) so the response is v0(t)=V[l-cxp(-t/RC)]. 1) add up to the input step V. 9V J . 2 " - · RC (a) (b) FIG. 7. Step response of the low-pass circuit. 35//ft, where/h is the upper cut-off frequency in Fig. 1b (assuming the simple form of response). 7) reduces to v0 = Vt/RC, so the initial slope is V/RC.
L -. 16) LCj The characteristic equation s2 + (RJL) s + l/LC has roots at and a2 "-»"-^[(D'-H:]*· (2 17) - The three damping conditions referred to above arise from the three possible relationships between the two terms in the square brackets. TRANSIENTS AND WAVESHAPING IN LINEAR CIRCUITS '-TO* (a) R21 33 =f= L I Yo (b) FIG. 14. Series and parallel RLC circuits. (1) When (RJ2L)2 > 1/LC or Ri > 2VL/C, the bracket is posi tive, the roots are real and the circuit is overdamped. The current rises slowly, more or less sinusoidally and then decays exponentially.